Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...

The invention of the transistor in 1947 by Shockley, Bardeen and Brattain at Bell Laboratories ushered in the age of microelectronics and revolutionized our lives. First, so-called bipolar transistors ...

New technical paper titled “Organic bipolar transistors” from researchers at Technische Universität Dresden, NanoP, Technische Hochschule Mittelhessen, University of Applied Science, and ALBA ...

The U.S. power transistor market was valued at USD 3.10 billion in 2025 and is projected to reach USD 6.43 billion by 2035, expanding at a CAGR of 9.55%. Growth is fueled by rising EV adoption driving ...

We like to pretend that our circuit elements are perfect because, honestly, it makes life easier and it often doesn’t matter much in practice. For a normal design, the fact that a foot of wire has a ...

Diodes has expanded its series of automotive-compliant bipolar transistors with 12 NPN and PNP devices designed to achieve ultra-low V CE(sat). With a saturation voltage of just 17 mV at 1 A and ...

Diodes has introduced a series of low saturation npn and pnp bipolar transistors optimised for automotive power switching and control. “With BVceo up to 100V, continuous current to 10A – and 20A peak ...

This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs. The ...

The company’s first bipolar transistors in its miniature PowerDI5 surface-mount package are designed on a fifth-generation matrix emitter process, yielding a range of 12 NPN and PNP transistors with a ...

It used to be a rite of passage to be able to do the math necessary to design various bipolar transistor amplifier configurations. This doesn’t come up as often as it used to, but it is still a good ...